Assistant Professor, Electrical, Computer, and Systems Engineering
Dr. Zhao's research explores ultra-wide bandgap semiconductors—such as AlN—for acoustic filters and HEMTs, with a focus on monolithic integration of acoustic and electronic devices for RF, multifunctional sensing, and quantum technologies.
1. W. Zhao, K. Nomoto, C. Savant, J. Encomendero, H. K. P., X. Tong, T. Li, M. Verma, R. Singh, R. Chaudhuri, H. X. Tang, D. A. Muller, J. C. M. Hwang, H. G. Xing, D. Jena, “BAWFET: monolithic integration of RF amplifiers and RF filters for active filtering”, under submission; reported in Device Research Conference (DRC), 2025.
2. T. S. Nguyen, K. Nomoto, W. Zhao, C. Savant, H. G. Xing, D. Jena, “Strain-balanced AlScN/GaN HEMTs with f_T/f_MAX of 173/321 GHz”, in IEEE International Electron Devices Meeting (IEDM), 2024.
3. W. Zhao, M. J. Asadi, L. Li, R. Chaudhuri, K. Nomoto, H. G. Xing, J. C. M. Hwang, D. Jena, “15-GHz epitaxial AlN FBARs on SiC substrates”, IEEE Electron Device Letters, 44, 903-906, 2023.
4. W. Zhao, M. J. Asadi, L. Li, R. Chaudhuri, K. Nomoto, H. G. Xing, J. C. M. Hwang, D. Jena, “X-band epi-BAW resonators”, Journal of Applied Physics, 132, 024503, 2022.
5. M. J. Asadi, L. Li, W. Zhao, K. Nomoto, P. Fay, H. G. Xing, D. Jena, J. C. M. Hwang, “Substrate-integrated waveguides for monolithic integrated circuits above 110 GHz”, in IEEE MTT‐S International Microwave Symposium (IMS), 2021.