Mcpherson, J.A., Woodworth, A. A., Chow, T.P., Ji, W. (2022) “Simulation-based study of single-event burnout in 4H-SiC high-voltage vertical superjunction DMOSFET: Physical failure mechanism and robustness vs performance tradeoffs”, Applied Physics Letters, 120

Torky, M., Chow, T.P. (2022) “Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices”, Materials Science Forum, 1062 MSF, pp.560-564.

Hitchcock, C., Ghandi, R., Deeb, P., Kennerly, S., Torky, M., Chow, T.P. (2022) “Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants”, Materials Science Forum, 1062 MSF, pp.422-426.

McPherson, J.A., Woodworth, A.A., Chow, T.P., Ji, W. (2022), “Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment” Materials Science Forum, 1062 MSF, pp.683-687.

Torky, M., Chow, T.P., (2022) “Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs”, Materials Science Forum, 1062 MSF, pp.565-569.