Professor, Mechanical, Aerospace, and Nuclear Engineering
Electro-thermal transient analysis of microelectronic power devices under radiation; radiation-hardened SiC power device (diodes and transistors) development, fabrication, and testing; heavy ion transport and energy deposition in semiconductors
McPherson, J.A., A.A. Woodworth, T.P. Chow, and W. Ji, "Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment", Materials Science Forum, 1062, 683-687 (2022)
McPherson, J.A., A.A. Woodworth, T.P. Chow, and W. Ji, "Simulation-based Study of Single-Event Burnout in 4H-SiC High-Voltage Vertical Superjunction DMOSFET: Physical Failure Mechanism and Robustness vs. Performance Tradeoffs," Applied Physics Letters, 120, 043501 (2022)
McPherson, J.A., C.W. Hitchcock, T.P. Chow, W. Ji, A.A. Woodworth, "Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices," IEEE Transactions on Nuclear Science, 68, 651-658 (2021)
McPherson, J.A., C.W. Hitchcock, T.P. Chow, W. Ji, A.A. Woodworth, "Mechanisms of Heavy Ion Induced Single Event Burnout in 4H-SiC Power MOSFETs," Materials Science Forum, 1004, 889-896 (2020)
McPherson, J.A., P.J. Kowal, G.K. Pandey, T.P. Chow, W. Ji, A. A. Woodworth, "Heavy Ion Transport Modeling for Single-Event Burnout in SiC-Based Power Devices," IEEE Transactions on Nuclear Science, 66, 474-481 (2019)