![Toh-Ming Lu](/sites/default/files/styles/large/public/2023-02/Lu-TohMing.jpeg?itok=90c4yxpw)
Professor, Physics, Applied Physics & Astronomy
Research focuses on ultrathin layer materials such as graphene to promote van der Waals epitaxial growth of interconnect metals. The first level metals used include Ru, Re, and Ir. Graphene can also be used as a barrier layer to prevent metal diffusion.
Timalsina, Y.P., Horning, A., Spivey, R.F., Lewis, K.M., Kuan, T-S. Wang, G.C., Lu, T-M.(2015) "Effects of nanoscale surface roughness on the resistivity of ultrathin epitaxial copper films"", Nanotechnology 26, 075704 (2015). DOI: 10.1088/0957-4484/26/7/075704
Sun, X., Lu, Z., Gupta, T., Basu, S., Koratkar,N., Washington, M., Lu, T-M (2019) "Comparative study on the antioxidation behaviors of polycrystalline multilayer and single-crystalline monolayer graphene"", 2D Materials, 6, pp 015020, Doi: 10.1088/2053-1583/aaf033
Zhang, Y., Wang, G-C., Lu, T-M., Kuan, T-S. (2020), “Chemical reaction induced carrier localization in nanometer-thin Al/Ru, Al/Co,and Al/Mo superlattices,” Nanotechnology 31, 035001, DOI: 10.1088/1361-6528/ab453f
Sun, X., Lu, Z., Chen, Z., Wang, Y., Jian Shi, J., Washington, M., Lu, T-M. (2018) "Single-crystal graphene-directed van der Waals epitaxial resistive switching"", ACS Applied Materials and Interfaces, 10(7), pp 6730-6736, doi: 10.1021/acsami.7b18385
Xu, Y., Lu, T-M., J.L. (2022) "A transport model describing how defect accumulation leads to intrinsic dielectric breakdown and post-breakdown conduction"", Microelectronics Reliability 128, 114459, doi: 10.1016/j.microrel.2021.114459