Professor, Physics, Applied Physics & Astronomy and Materials Science and Engineering
Wide bandgap and ultra-wide bandgap semicondcutor characterization and epitaxy for optoelectronics and power devices
Jóźwik, P. Cardoso, J.P.S. et.al. (2022) Analysis of damage in InGaN/GaN layers upon Xe and Pb swift heavy ion irradiation using ion channeling and X-Ray diffraction, Physical Chemistry Chemical Physics, 24, 25773 – 25787, DOI: 10.1039/D2CP02526D
Itakura, H., Nomura, T. et.al. (2020) Effect of InGaN/GaN superlattice on the characteristics of AlGaN/GaN HEMT, AIP Advances 10(2), 025133. DOI: 10.1063/1.5139591
Guo, Z., Hitchcock, C. et.al. (2019) Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs using Selective Epi Removal, IEEE Electron Device Letters 40(11), 1736-1739. DOI 10.1109/LED.2019.2943911
Lee, S.C., Peterson, E. et.al. (2019) Elastic variation of quasi-one-dimensional cubic-phase GaN at nanoscale, ACS Crystal Growth & Design 19, 5046−5053. DOI: 10.1021/acs.cgd.9b00339
Howell-Clark, J., Guo, Z. et.al. (2019) Improved electrical performance of MOCVD-grown GaN p-i-n diodes with high-low junction p-layers, Solid State Electronics 162, 107646. DOI 10.1016/j.sse.2019.107646